RTM2302 Просмотр технического описания (PDF) - Sirectifier Global Corp.
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RTM2302 Datasheet PDF : 4 Pages
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RTM2302
Electrical Characteristics
Rate ID = 2.4A, (Ta = 25 oC unless otherwise noted)
Parameter
Conditions
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
On-State Drain Current
Forward Transconductance
Dynamic
VGS = 0V, ID = 250uA
VGS = 4.5V, ID = 3.6A
VGS = 2.5V, ID = 3.1A
VDS = VGS, ID = 250uA
VDS = 20V, VGS = 0V
VGS = ± 8V, VDS = 0V
VDS ≧ 5V, VGS = 4.5V
VDS = 5V, ID = 3.6A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 10V, ID = 3.6A,
VGS = 4.5V
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 10V, RL = 10Ω,
ID = 1A, VGEN = 4.5V,
RG = 6Ω
Input Capacitance
Output Capacitance
VDS = 10V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS = 1.0A, VGS = 0V
Note : pulse test: pulse width <=300uS, duty cycle <=2%
Symbol
BVDSS
RDS(ON)
RDS(ON)
VGS(TH)
IDSS
IGSS
ID(ON)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
IS
VSD
Min
20
--
--
0.45
--
--
6
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ Max Unit
--
--
V
50
65
mΩ
75
95
--
--
V
--
1.0
uA
--
± 100
nA
--
--
A
10
--
S
5.2
10
0.65
--
nC
1.5
--
7
15
55
80
nS
16
60
10
25
450
--
70
--
pF
43
--
--
1.6
A
0.75
1.2
V
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