RTR020P02TL Просмотр технического описания (PDF) - ROHM Semiconductor

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производитель

RTR020P02TL

Switching (−20V, −2.0A)

ROHM Semiconductor 

Transistors

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Gate-source leakage

IGSS

−

− ±10 µA VGS=±12V, VDS=0V

Drain-source breakdown voltage V(BR) DSS −20 −

−

V ID= −1mA, VGS=0V

Zero gate voltage drain current IDSS

−

−

−1 µA VDS= −20V, VGS=0V

Gate threshold voltage

VGS (th) −0.7 − −2.0 V VDS= −10V, ID= −1mA

Static drain-source on-state

resistance

−

RDS (on)∗ −

−

100 135 mΩ ID= −2.0A, VGS= −4.5V

110 150 mΩ ID= −2.0A, VGS= −4.0V

180 250 mΩ ID= −1.0A, VGS= −2.5V

Forward transfer admittance

Yfs ∗ 1.2

−

−

S VDS= −10V, ID= −1.0A

Input capacitance

Ciss

− 430 −

pF VDS= −10V

Output capacitance

Coss

−

80

−

pF VGS=0V

Reverse transfer capacitance Crss

− 55 − pF f=1MHz

Turn-on delay time

td (on) ∗ −

11

−

ns ID= −1.0A

Rise time

Turn-off delay time

Fall time

tr ∗ −

13

−

ns VDD −15V

td (off) ∗ −

38

−

VGS= −4.5V

ns RL=15Ω

tf ∗ −

12

−

ns RGS=10Ω

Total gate charge

Qg

− 4.9 − nC VDD −15V

Gate-source charge

Qgs

− 1.2 − nC VGS= −4.5V

Gate-drain charge

Qgd

− 1.3 − nC ID= −2.0A

∗Pulsed

Body diode characteristics (source-drain characteristics)

Forward voltage

VSD

−

− −1.2 V IS= −0.8A, VGS=0V

RTR020P02

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