HYM328025GS-50 Просмотр технического описания (PDF) - Infineon Technologies

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HYM328025GS-50

8M × 32-Bit EDO-DRAM Module

Infineon Technologies 

HYM328025S/GS-50/-60

8M × 32-Bit EDO-Module

AC Characteristics (contd’ ) 5)6)

TA = 0 to 70 °C,VCC = 5 V ± 10 %, tT = 2 ns

Parameter

Symbol

Limit Values

Unit Note

-50

-60

min. max. min. max.

Early Write Cycle

Write command hold time

Write command pulse width

Write command setup time

Write command to RAS lead time

Write command to CAS lead time

Data setup time

Data hold time

Hyper Page Mode (EDO) Cycle

Hyper page mode (EDO) cycle time

CAS precharge time

Access time from CAS precharge

Output data hold time

RAS pulse width in hyper page mode

CAS precharge to RAS Delay

CAS before RAS Refresh Cycle

CAS setup time

CAS hold time

RAS to CAS precharge time

Write to RAS precharge time

Write hold time referenced to RAS

tWCH

8

–

tWP

8

–

tWCS

0

–

tRWL

13

–

tCWL

13

–

tDS

0

–

tDH

8

–

10 –

10 –

0

–

15 –

15 –

0

–

10 –

ns

ns

ns 13

ns

ns

ns 14

ns 14

tHPC

20

tCP

8

tCPA

–

tCOH

5

tRAS

50

tRHCP 27

–

25

–

10

27 –

–

5

200k 60

–

32

–

ns

–

ns

32 ns 7

–

ns

200k ns

–

ns

tCSR

10

–

10 –

ns

tCHR

10

–

10 –

ns

tRPC

5

–

5

–

ns

tWRP

10

–

10 –

ns

tWRH

10

–

10 –

ns

Semiconductor Group

8

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