HYM328025GS-50 Просмотр технического описания (PDF) - Infineon Technologies

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производитель

HYM328025GS-50

8M × 32-Bit EDO-DRAM Module

Infineon Technologies 

HYM328025S/GS-50/-60

8M × 32-Bit EDO-Module

DC Characteristics1) (contd’ )

Parameter

Average VCC supply current

during hyper page mode (EDO)

(RAS = VIL, CAS, address cycling,

tPC = tPC min)

-50 version

-60 version

Standby VCC supply current

(RAS = CAS = VCC – 0.2 V)

Average VCC supply current

during CAS-before-RAS refresh mode

(RAS, CAS cycling, tRC = tRC min)

-50 version

-60 version

Symbol

ICC4

Limit Values

min.

max.

Unit Test

Condition

–

–

ICC5

–

ICC6

–

–

560

mA 2) 3) 4)

440

mA

16

mA 1)

960

mA 2) 4)

880

mA

Capacitance

TA = 0 to 70 °C, VCC = 5 V ± 10 %, f = 1 MHz

Parameter

Input capacitance (A0 to A10,WE)

Input capacitance (RAS0 - RAS3)

Input capacitance (CAS0 - CAS3)

I/O capacitance

(DQ0-DQ31)

Symbol

CI1

CI2

CI3

CIO

Limit Values

min.

max.

–

120

–

45

–

40

–

25

Unit

pF

pF

pF

pF

Semiconductor Group

6

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