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RT8073 Просмотр технического описания (PDF) - Richtek Technology

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RT8073 Datasheet PDF : 16 Pages
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RT8073
Parameter
MOSFET
High Side MOSFET On-resistance
Low Side MOSFET On-resistance
Current Limit
Current Limit Threshold
Power Good
Power Good Range
(WDFN-12L 3x3 only)
Over Temperature Protection
Thermal Shutdown
Thermal Shutdown Hysteresis
Symbol
Test Conditions
Min Typ Max Unit
VIN = 5V, BOOT LX = 5V
-- 50 --
mΩ
VIN = 5V
-- 35 --
mΩ
7
9
--
A
VFB Rising (Good)
VFB Falling (Fault)
VFB Rising (Fault)
VFB Falling (Good)
Rising
-- 94 --
-- 90 --
--
110
--
% VREF
-- 106 --
-- 165 --
°C
-- 20 --
°C
Note 1. Stresses beyond those listed Absolute Maximum Ratingsmay cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Copyright ©2012 Richtek Technology Corporation. All rights reserved.
www.richtek.com
6
is a registered trademark of Richtek Technology Corporation.
DS8073-01 November 2012

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