RSB6.8ZS Просмотр технического описания (PDF) - ROHM Semiconductor
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RSB6.8ZS Datasheet PDF : 9 Pages
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Bi direction ESD Protection Diode
RSB6.8ZS
Data Sheet
lApplication
ESD Protection
lDimensions (Unit : mm)
lFeatures
1) Ultra small mold type.
(GMD2)
2) Bi direction.
3) High reliability
4) By chip-mounter, automatic
mounting is possible.
8
0～0.03
0.3±0.05
0.3±0.03
lLand size figure (Unit : mm)
0.31
0.27±0.03
ROHM : GMD2
JEDEC : SOD962
JEITA : -
dot(year week factory)
lStructure
GMD2
lConstruction
Silicon Epitaxial Planar Type
lTaping specifications (Unit : mm)
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Limits
Unit
Power dissipation
P
100
mW
Junction temperature
Storage temperature
Operation temperature range
Tj
150
°C
Tstg
-55 to +150
°C
Topor
-55 to +150
°C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Zener voltage
VZ 5.78 - 7.82 V IZ=1mA
Reverse current
IR
- - 0.5 mA VR=3.5V
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1/5
2014.04 - Rev.B
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