RSB12JS2 Просмотр технического описания (PDF) - ROHM Semiconductor

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Компоненты Описание

производитель

RSB12JS2

Bi Direction ESD Protection Diode

ROHM Semiconductor 

Diodes

RSB12JS2

Bi Direction ESD Protection Diode

(Silicon Epitaxial Planer)

RSB12JS2

zApplication

ESD Protection

zFeatures

1) Low capacitance

2) Bi direction

3) Ultra small mold type (EMD6)

zAbsolute maximum ratings (Ta=25°C)

Power dissipation

Junction temperature

Storage temperature

Pd

150 mW/Total

Tj

150 °C

Tstg

−55 to 150 °C

zElectrical characteristics (Ta=25°C) (∗Rating of per diode)

Characteristic

Symbol

Test Condition

Zener Voltage

Vz

Iz=

Reverse current

IR

VR=

Junction capacitance

Ct

　f=

VR=

∗ Please pay attention to static electricity when handling.

∗ Zener voltage (Vz) shall be measured at 40ms after loading current.

5 mA

9V

1MHz

0V

Standard

MIN.

MAX.

9.6 V

14.4 V

-

0.1µA

1 pF

TYP.

1/3

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