RQJ0303PGDQA(2006) Просмотр технического описания (PDF) - Renesas Electronics

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производитель

RQJ0303PGDQA
(Rev.:2006)

Silicon P Channel MOS FET Power Switching

Renesas Electronics 

RQJ0303PGDQA

Electrical Characteristics

Item

Drain to source breakdown voltage

Gate to source breakdown voltage

Gate to source breakdown voltage

Gate to source leak current

Gate to source leak current

Drain to source leak current

Gate to source cutoff voltage

Drain to source on state resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn - on delay time

Rise time

Turn - off delay time

Fall time

Total gate charge

Gate to source charge

Gate to drain charge

Body - drain diode forward voltage

Notes: 3. Pulse test

Symbol

V(BR)DSS

V(BR)GSS

V(BR)GSS

IGSS

IGSS

IDSS

VGS(off)

RDS(on)

RDS(on)

|yfs|

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VDF

Min

–30

+10

–20

—

—

—

–1.0

—

—

2.5

—

—

—

—

—

—

—

—

—

—

—

Typ

—

—

—

—

—

—

—

54

76

4.2

625

111

83

18

29

47

5.7

12

1.5

2.9

–0.9

Max

—

—

—

+10

–10

–1

–2.0

68

107

—

—

—

—

—

—

—

—

—

—

—

—

Unit

V

V

V

µA

µA

µA

V

mΩ

mΩ

S

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

(Ta = 25°C)

Test conditions

ID = –10 mA, VGS = 0

IG = +100 µA, VDS = 0

IG = –100 µA, VDS = 0

VGS = +8 V, VDS = 0

VGS = –16 V, VDS = 0

VDS = –30 V, VGS = 0

VDS = –10 V, ID = –1 mA

ID = –1.6 A, VGS = –10 VNote3

ID = –1.6 A, VGS = –4.5 VNote3

ID = –1.6 A, VDS = –10 VNote3

VDS = –10 V, VGS = 0,

f = 1 MHz

ID = –1 A, VGS = –10 V,

RL = 6.6 Ω, Rg = 4.7 Ω

VDD = –10 V, VGS = –10 V,

ID = –3.3A

IF = –1.5 A, VGS = 0 Note3

Rev.4.00, May 26, 2006, page 2 of 6

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