RQJ0303PGDQA(2006) Просмотр технического описания (PDF) - Renesas Electronics

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производитель

RQJ0303PGDQA
(Rev.:2006)

Silicon P Channel MOS FET Power Switching

Renesas Electronics 

RQJ0303PGDQA

Silicon P Channel MOS FET

Power Switching

Features

• Low on-resistance

RDS(on) = 54 mΩ typ (VGS = –10 V, ID = –1.6 A)

• Low drive current

• High speed switching

• 4.5 V gate drive

Outline

REJ03G1272-0400

Rev.4.00

May 26, 2006

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

3

D

3

1

G

1. Source

2

2

2. Gate

3. Drain

S

1

Note: Marking is “PG”.

Absolute Maximum Ratings

Item

Symbol

Drain to source voltage

VDSS

Gate to source voltage

VGSS

Drain current

Drain peak current

ID

ID(Pulse) Note1

Body - drain diode reverse drain current

Channel dissipation

IDR

Pch Note2

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)

Ratings

–30

+10 / –20

–3.3

–5

–3.3

0.8

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

W

°C

°C

Rev.4.00, May 26, 2006, page 1 of 6

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