RQA0004PXDQS(2006) Просмотр технического описания (PDF) - Renesas Electronics
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производитель
RQA0004PXDQS Datasheet PDF : 13 Pages
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RQA0004PXDQS
Electrical Characteristics
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward Transfer Admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Output Power
Symbol
IDSS
IGSS
VGS(off)
|yfs|
Ciss
Coss
Crss
Pout
Power Added Efficiency
PAE
Min.
—
—
0.3
0.3
—
—
—
28.7
0.74
60
Typ
—
—
0.6
0.43
10
5
0.4
29.7
0.93
68
Max.
2
±2
0.9
0.6
—
—
—
—
—
—
Unit
µA
µA
V
S
pF
pF
pF
dBm
W
%
(Ta = 25°C)
Test Conditions
VDS = 16 V, VGS = 0
VGS = ±5 V, VDS = 0
VDS = 6 V, ID = 1 mA
VDS = 6 V, ID = 0.3 A
VGS = 5 V, VDS = 0, f = 1 MHz
VDS = 6 V, VGS = 0, f = 1 MHz
VDG = 6 V, VGS = 0, f = 1 MHz
VDS = 6 V, IDQ = 50 mA
f = 520 MHz
Pin = +13 dBm (20 mW)
Main Characteristics
Maximum Channel Power
Dissipation Curve
5
4
3
2
1
Typical Output Characteristics
0.4 2.0 V
Pulse Test
1.75 V
0.3
1.5 V
0.2
1.25 V
0.1
VGS = 1.0 V
0
50
100
150
200
Case Temperature TC (°C)
Typical Transfer Characteristics
0.5
VDS = 6 V
Pulse Test
0.4
|yfs|
0.3
0.2
ID
0.1
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Forward Transfer Admittance
vs. Drain Current
1
VDS = 6 V
Pulse Test
0.1
0
0.5
1.0
1.5
2.0
Gate to Source Voltage VGS (V)
0.01
0.1
1
Drain Current ID (A)
Rev.1.00 Dec 12, 2006 page 2 of 12
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