RN739 Просмотр технического описания (PDF) - ROHM Semiconductor
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Компоненты Описание
производитель
RN739 Datasheet PDF : 2 Pages
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Diodes
PIN diode
RN739F / RN739D
RN739F / RN739D
!Applications
VHF / UHF band variable attenuators and AGC
!Features
1) Multiple diodes in one small surface mount package.
(UMD3, SMD3)
2) Low high-frequency forward resistance (rF) / low
capacitance (CT).
3) High reliability.
!Construction
Silicon diffusion junction
!Circuit
!External dimensions (Units : mm)
RN739F
2.0±0.2
1.3±0.1
0.65 0.65
0.9±0.1
0.3
0.6
0~0.1
0.3±0.1
0.15±0.05
(All pins have the same dimensions)
ROHM : UMD3
EIAJ : SC-70
JEDEC : SOT-323
RN739D
2.9±0.2
1.9±0.2
0.95 0.95
1.1
+0.2
−0.1
0.8±0.1
0~0.1
0.4
+0.1
−0.05
0.15
+0.1
−0.06
(All pins have the same dimensions)
ROHM : SMD3
EIAJ : SC-59
JEDEC : SOT-346
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
DC reverse voltage
VR
50
V
DC forward current
IF
50
mA
Power dissipation
Pd
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55~+125
°C
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VF
−
−
1.0
V
IF=50mA
Reverse current
IR
−
−
100
nA VR=50V
Capacitance between terminals
CT
−
−
0.4
pF VR=35V, f=1MHz
Forward operating resistance
rF
−
−
7
Ω
IF=10mA, f=100MHz
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