RN4910(2001) Просмотр технического описания (PDF) - Toshiba

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RN4910
(Rev.:2001)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

Toshiba 

RN4910

Q1 Electrical Characteristics (Ta = 25°C)

Characteristic

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

IEBO

hFE

VCE (sat)

fT

Cob

Test

Circuit

Test Condition

― VCB = −50V, IE = 0

― VEB = −5V, IC = 0

― VCE = −5V, IC = −1mA

― IC = −5mA, IB = −0.25mA

― VCE = −10V, IC = −5mA

― VCB = −10V, IE = 0, f = 1MHz

Min Typ. Max Unit

―

― −100 nA

―

― −100 mA

120

―

400

―

―

−0.1 −0.3

V

―

200

― MHz

―

3

6

pF

Q2 Electrical Characteristics (Ta = 25°C)

Characteristic

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

IEBO

hFE

VCE (sat)

fT

Cob

Test

Circuit

Test Condition

― VCB = 50V, IE = 0

― VEB = 5V, IC = 0

― VCE = 5V, IC = 1mA

― IC = 5mA, IB = 0.25mA

― VCE = 10V, IC = 5mA

― VCB = 10V, IE = 0, f = 1 MHz

Min Typ. Max Unit

―

―

100

nA

―

―

100

mA

120

―

700

―

―

0.1 0.3

V

―

250

― MHz

―

3

6

pF

Q1, Q2 Common Electrical Characteristics (Ta = 25°C)

Characteristic

Input resistor

Symbol

R1

Test

Circuit

―

Test Condition

―

Min Typ. Max Unit

3.29 4.7 6.11 kΩ

3

2001-06-07

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