RMPA1766 Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
RMPA1766 Datasheet PDF : 7 Pages
| |||
PRELIMINARY
Absolute Maximum Ratings(1)
Symbol
Vcc1, Vcc2
Vref
Vmode
Pin
Tstg
Parameter
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
Value
5.0
2.6 to 3.5
3.5
+10
-55 to +150
Units
V
V
V
dBm
°C
Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics(2)
Symbol
Parameter
f Operating Frequency
CDMA/WCDMA OPERATION
Gp Power Gain
Po Linear Output Power
PAEd PAEd (digital) @ +28dBm
PAEd (digital) @ +16dBm
Itot High Power Total Current
Low Power Total Current
WCDMA Adjacent Channel Leakage
Ratio
ACLR1 ±5.00MHz Offset
ACLR2 ±10.00MHz Offset
GENERAL CHARACTERISTICS
VSWR Input Impedance
Rx No Receive Band Noise Power
2fo Harmonic Suppression
3fo-5fo Harmonic Suppression
S
Spurious Outputs(3)(4)
Ruggedness w/ Load
Mismatch(4)
Tc Case Operating Temperature
DC CHARACTERISTICS
Iccq Quiescent Current
Iref Reference Current
Icc(off) Shutdown Leakage Current
Comments
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode ≥ 2.0V
Vmode = 0V
Vmode ≥ 2.0V
Vmode = 0V
Vmode ≥ 2.0V
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode ≥ 2.0V
WCDMA Modulation 3GPP
3.2 03-00 DPCCH +1 DCDCH
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode ≥ 2.0V
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode ≥ 2.0V
Po ≤ +28dBm;
2110 to 2155MHz
Po ≤ +28dBm
Po ≤ +28dBm
Load VSWR ≤ 5.0:1
No permanent damage.
Vmode ≥ 2.0V
Po ≤ +28dBm
No applied RF signal
Min.
1710
28
16
-30
Typ.
28
20
40
20
460
58
-40
-40
-55
-55
2.0:1
-139
-40
-55
25
5.0
1
Max.
1755
Units
MHz
dB
dB
dBm
dBm
%
%
mA
mA
dBc
dBc
dBc
dBc
2.5:1
dBm/Hz
dBc
dBc
-60
dBc
10:1
85
°C
mA
mA
5
µA
Notes:
2. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V and load VSWR ≤ 1.2:1, unless otherwise noted.
3. All phase angles.
4. Guaranteed by design.
©2007 Fairchild Semiconductor Corporation
RMPA1766 i-Lo™ Rev. B
2
www.fairchildsemi.com
Share Link: 