RJP4003ASA(2006) Просмотр технического описания (PDF) - Renesas Electronics
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производитель
RJP4003ASA Datasheet PDF : 5 Pages
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RJP4003ASA
Application Example
VCM
Trigger Transformer
Xe Tube
CM +
–
4
3
2
1
5
6
7
8
IGBT driver
RD5CYD08
RD5CYDT08
VCM
ICP
CM
VGE
Recommended Operation Maximum Operation
Conditions
Conditions
330 V
350 V
130 A
150 A
330 µF
400 µF
5V
4V
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
turn-off dv/dt must become less than 400 V/ µs. In general, when RG (off) = 68 Ω, it is satisfied.
3. The ground of the drive signal must be connected to pin 3 only. If the emitter terminal pins 1 and 2 in which a large
currents flow are given to the device as the drive signal emitter, the device may be damaged due to large currents
since the specified gate voltage is not applied to the IGBT within the device.
4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 150 A :
full luminescence condition) of main capacitor (CM = 400 µF). Repetition period under full luminescence
condition is over 3 seconds.
5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 6 V.
Rev.1.00 Oct 13, 2006 page 3 of 4
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