RJK6013DPP-E0 Просмотр технического описания (PDF) - Renesas Electronics

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RJK6013DPP-E0

600V - 11A - MOS FET High Speed Power Switching

Renesas Electronics 

RJK6013DPP-E0

600V - 11A - MOS FET

High Speed Power Switching

Features

 Low on-resistance

RDS(on) = 0.58  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)

 Low leakage current

 High speed switching

Outline

RENESAS Package code: PRSS0003AG-A

(Package name: TO-220FP)

G

1

23

Absolute Maximum Ratings

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Avalanche current

Avalanche energy

Channel dissipation

VDSS

VGSS

ID Note4

ID (pulse) Note1

IDR

IDR (pulse) Note1

IAP Note3

EAR Note3

Pch Note2

Channel to case thermal impedance

ch-c

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tc = 25C

3. STch = 25C, Tch  150C

4. Limited by maximum safe operation area

Preliminary Datasheet

R07DS0612EJ0100

Rev.1.00

Feb 20, 2012

D

1. Gate

2. Drain

3. Source

S

Ratings

600

30

11

33

11

33

4

0.87

30

4.17

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

A

mJ

W

C/W

C

C

R07DS0612EJ0100 Rev.1.00

Feb 20, 2012

Page 1 of 6

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