RJK6013DPE-00-J3 Просмотр технического описания (PDF) - Renesas Electronics

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RJK6013DPE-00-J3

600V - 11A - MOS FET High Speed Power Switching

Renesas Electronics 

RJK6013DPE

600V - 11A - MOS FET

High Speed Power Switching

Features

 Low on-resistance

RDS(on) = 0.58  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)

 Low leakage current

 High speed switching

Outline

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK(S)-(1) )

4

123

G

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Avalanche current

Avalanche energy

Channel dissipation

Channel to case thermal impedance

Channel temperature

Storage temperature

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tc = 25C

3. STch = 25C, Tch  150C

Symbol

VDSS

VGSS

ID

ID

Note1

(pulse)

IDR

IDR

Note1

(pulse)

IAPNote3

EARNote3

Pch Note2

ch-c

Tch

Tstg

Preliminary Datasheet

R07DS0486EJ0200

(Previous: REJ03G1535-0100)

Rev.2.00

Jun 21, 2012

D

1. Gate

2. Drain

3. Source

4. Drain

S

Ratings

600

30

11

33

11

33

4

0.87

100

1.25

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

A

mJ

W

C/W

C

C

R07DS0486EJ0200 Rev.2.00

Jun 21, 2012

Page 1 of 6

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