RFD10P03L Просмотр технического описания (PDF) - Harris Semiconductor

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производитель

RFD10P03L

10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET

Harris Semiconductor 

RFD10P03L, RFD10P03LSM, RFP10P03L

TO-220AB

3 LEAD JEDEC TO-220AB PLASTIC PACKAGE

A

ØP

E

Q

H1

D

E1

L1

L

60o

D1

b1

b

123

e

e1

45o

c

J1

LEAD NO. 1

LEAD NO. 2

LEAD NO. 3

TERM. 4

- GATE

- DRAIN

- SOURCE

- DRAIN

A1

TERM. 4

INCHES

MILLIMETERS

SYMBOL MIN

MAX

MIN

MAX NOTES

A

0.170

0.180

4.32

4.57

-

A1

0.048

0.052

1.22

1.32

-

b

0.030

0.034

0.77

0.86

3, 4

b1

0.045

0.055

1.15

1.39

2, 3

c

0.014

0.019

0.36

0.48

2, 3, 4

D

0.590

0.610 14.99

15.49

-

D1

-

0.160

-

4.06

-

E

0.395

0.410 10.04

10.41

-

E1

-

0.030

-

0.76

-

e

0.100 TYP

2.54 TYP

5

e1

0.200 BSC

5.08 BSC

5

H1

0.235

0.255

5.97

6.47

-

J1

0.100

0.110

2.54

2.79

6

L

0.530

0.550 13.47

13.97

-

L1

0.130

0.150

3.31

3.81

2

ØP

0.149

0.153

3.79

3.88

-

Q

0.102

0.112

2.60

2.84

-

NOTES:

1. These dimensions are within allowable dimensions of Rev. J of

JEDEC TO-220AB outline dated 3-24-87.

2. Lead dimension and finish uncontrolled in L1.

3. Lead dimension (without solder).

4. Add typically 0.002 inches (0.05mm) for solder coating.

5. Position of lead to be measured 0.250 inches (6.35mm) from bot-

tom of dimension D.

6. Position of lead to be measured 0.100 inches (2.54mm) from bot-

tom of dimension D.

7. Controlling dimension: Inch.

8. Revision 1 dated 1-93.

9

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