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Номер в каталоге
Компоненты Описание
RF505B6S Просмотр технического описания (PDF) - ROHM Semiconductor
Номер в каталоге
Компоненты Описание
производитель
RF505B6S
Super Fast Recovery Diode
ROHM Semiconductor
RF505B6S Datasheet PDF : 4 Pages
1
2
3
4
RF505B6S
Electrical characteristic curves
Data Sheet
100
Tj=125
C
10
Tj=150
C
1
Tj=25
C
0.1
Tj=75
C
100000
10000
1000
100
10
Tj=150
C
Tj=125
C
Tj=75
C
Tj=25
C
0.01
0
500
1000 1500 2000
FORWARD VOLTAGE:V
F
(mV)
V
F
-I
F
CHARACTERISTICS
2500
1
0
100 200 300 400 500 600
REVERSE VOLTAGE:V
R
(V)
V
R
-I
R
CHARACTERISTICS
1000
100
f=1MHz
10
1
0
5
10
15
20
25
30
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
1400
1350
1300
100
Tj=25
C
I
F
=5A
n=20pcs
1250
10
1200
1150
AVE:1297mV
1100
1
V
F
DISPERSION MAP
170
Tj=25
C
V
R
=600V
160
n=20pcs
AVE:33.7nA
150
140
130
120
I
R
DISPERSION MAP
Tj=25
C
f=1MHz
V
R
=0V
n=10pcs
AVE:150.6pF
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
10
1
30
25
Ifsm
1cyc
20
8.3ms
15
10
AVE:107.5A
5
0
I
FSM
DISRESION MAP
30
Ifsm
25
t
20
15
10
5
0
10
100
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
AVE:22.0ns
Tj=25
C
I
F
=0.5A
I
R
=1A
Irr=0.25×I
R
n=10pcs
trr DISPERSION MAP
No break at 30kV
AVE:19.9kV
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
1000
100
10
Ifsm
8.3ms 8.3ms
1cyc
1
1
10
100
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
On glass-epoxy board
Rth(j-a)
10
Rth(j-c)
IM=100mA
I
F
=1.5A
1
1ms
time
300us
0.1
0.001 0.01 0.1
1
10
100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
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2/3
2011.05 - Rev.A
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