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RF3159 Просмотр технического описания (PDF) - RF Micro Devices

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RF3159 Datasheet PDF : 26 Pages
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RF3159
Power On Sequence
GMSK Power On/Off Sequence
VBATT
3.2 V to 4.5 V
BAND_SEL
VMODE
TX_EN
VRAMP
>1.5 V High Band
<0.7 V Low Band
<0.7 V GMSK Mode
>1.5 V PA ON
2.2V for max POUT
~0.3 V for min POUT
Power On Sequence:
1. Apply VBATT
2. Apply BAND_SEL
3. Apply Low on VMODE
4. Apply RFIN
5. Apply minimum VRAMP (~0.3V)
6. Apply TX_EN
7. Ramp VRAMP for desired output power
The Power Down Sequence is the reverse
order of the Power On Sequence.
8PSK Power On/Off Sequence
VBATT
BAND_SEL
VBIAS
VMODE
TX_EN
RFIN
3.2 V to 4.5 V
>1.5 V High Band
<0.7 V Low Band
>1.5 V High Power Mode
<0.7 V Low Power Mode
>1.5 V 8PSK Mode
Power On Sequence:
1. Apply VBATT
2. Apply BAND_SEL
3. Apply High or Low on VBIAS
4. Apply High on VMODE
5. Apply TX_EN
6. Ramp RFIN amplitude for desired output
power
The Power Down Sequence is the reverse
order of the Power On Sequence.
>1.5 V PA ON
~-1 dBm Low Band, ~-5 dBm High Band for rated POUT
Dual Mode Operation
MODE VMODE VBIAS
RF INPUT
VRAMP
TX ENABLE
GSM
Low Unused FIXED
Analog voltage that proportionally regulates collector
voltage. Controls output power level. (GSM Burst Ramp
Control)
High (Normal)
Low (Isolation)
8PSK High High1 Ramped burst from Variable Gain Amplifier Unused.
Low2 or Source (GSM Burst Ramp Control)
High (Normal)
Low (Isolation)
Note: When VMODE is low (GMSK mode), the voltage on VRAMP is used to regulate the PA collector voltage which directly controls the output
power. When VMODE is high (8PSK mode), the PA collector voltage is regulated to 3.6V. The supply for the PA base bias can be selected via the
VBIAS pin to optimize current drain for low or high power ranges.
1 Normal current consumption for maximum linear output power.
2 Reduced current consumption for improved efficiency at low PCL’s.
Rev A0 DS070102
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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