RF101_ Просмотр технического описания (PDF) - ROHM Semiconductor
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RF101_ Datasheet PDF : 3 Pages
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Diodes
RF 1series
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol RF071M2S
RF101L2S
RF301B2S
RF501B2S
Limits
RF601B2D
RF601T2D RF1001T2D RF1601T2D RF2001T2D Unit
Reverse voltage (repetitive peak) VRM
200
200
200
200
200
200
200
200
200
V
Reverse voltage (DC)
VR
Average rectified forward current IO
200
0.7 ∗1
200
1.0 ∗1
200
3.0 ∗1
200
5.0 ∗1
200
6.0 ∗1
200
6.0 ∗1
200
10.0 ∗1
200
16.0 ∗1
200
V
20.0 ∗1 A
Forward peak surge current
(60Hz 1cyc.)
IFSM
15
20
60
60
60
80
80
80
80
A
Junction temperature
Storage temperature
∗ Mounting on glass epoxi board
Tj
150
150
150
150
150
150
150
150
150
C
Tstg −55 to +150 −55 to +150 −55 to +150 −55 to +150 −55 to +150 −55 to +150 −55 to +150 −55 to +150 −55 to +150 C
zElectrical characteristics (Ta=25°C)
Part No.
RF071M2S
IO
VR
Max.
0.7A 200V 0.850V
VF
Typ.
0.790V
RF101L2S 1A 200V 0.870V 0.815V
RF301B2S 3A 200V 0.930V 0.870V
RF501B2S 5A 200V 0.930V 0.870V
RF601B2D 6A 200V 0.930V 0.870V
RF601T2D 6A 200V 0.930V 0.870V
RF1001T2D 10A 200V 0.930V 0.870V
RF1601T2D 16A 200V 0.930V 0.870V
RF2001T2D 20A 200V 0.930V 0.870V
IF
0.7A
1A
3A
5A
3A
3A
5A
8A
10A
IR
Max.
Typ.
10µA
10nA
10µA
10nA
10µA
10nA
10µA
10nA
10µA
10nA
10µA
10nA
10µA
10nA
10µA
10nA
10µA
10nA
trr
Max.
Typ.
25ns
12ns
25ns
12ns
25ns
14ns
30ns
15ns
25ns
14ns
25ns
14ns
30ns
15ns
30ns
18ns
30ns
20ns
Configurate
Single
Single
Cathode common
Single
Cathode common
Cathode common
Cathode common
Cathode common
Cathode common
Package
PMDU
PMDS
CPD(D-pack)
CPD(D-pack)
CPD(D-pack)
TO-220FN
TO-220FN
TO-220FN
TO-220FN
2/2
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