RF101L2S_(2011) Просмотр технического описания (PDF) - ROHM Semiconductor
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RF101L2S_ Datasheet PDF : 4 Pages
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RF101L2S
Data Sheet
1
10000
Ta=150℃
1000
0.1
Ta=125℃
Ta=75℃
0.01
100
10
Ta=25℃
1
Ta=-25℃
0.001
0
100 200 300 400 500 600 700 800 900
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.1
0.01
0
Ta=150℃ Ta=125℃
100
Ta=75℃
Ta=25℃
10
Ta=-25℃
f=1Mf=H1zMHz
1
50
100
150
200
0
5
10
15
20
25
30
REVERSE VOLTAGE：VR(V)
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
VR-Ct CHARACTERISTICS
850
100
Ta=25℃
90
IF=1A
840
n=30pcs
80
70
830
60
50
820
40
30
810
AVE:818.6mV
20
10
800
0
VF DISPERSION MAP
100
Ta=25℃
90
VR=200V
n=30pcs
80
70
60
50
40
AVE:11.1nA
30
20
10
0
IR DISPERSION MAP
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:37.0pF
Ct DISPERSION MAP
200
150
100
50
0
1000
100
10
Ifsm
1cyc
8.3ms
AVE:63.0A
IFSM DISRESION MAP
Ifsm
t
30
Ta=25℃
25
IF=0.5A
IR=1A
Irr=0.25*IR
20
n=10pcs
15
10
AVE:12.2ns
5
0
trr DISPERSION MAP
1000
Mounted on epoxy board
IM=10mA
IF=100mA
1m time
100
300u
Rth(j-a)
Rth(j-c)
10
1000
100
10
Ifsm
8.3ms 8.3ms
1cyc
1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
2
1.5
DC
D=1/2
1
Sin(θ＝180)
1
0.5
1
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.1
0
0.001 0.01 0.1 1 10 100 1000
0
TIME:t(s)
Rth-t CHARACTERISTICS
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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2011.05 - Rev.B
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