RF101L2S_(2011) Просмотр технического описания (PDF) - ROHM Semiconductor
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RF101L2S_ Datasheet PDF : 4 Pages
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Data Sheet
Fast Recovery Diode
RF101L2S
Applications
General rectification
Features
1)Small power mold type. (PMDS)
2)Ultra low VF
3)Ultra high switching speed
4)Low switching loss
Dimensions (Unit : mm)
2.6±0.2
Land size figure (Unit : mm)
2.0
66
①②
0.1±0.02
0.1
Construction
Silicon epitaxial
1.5±0.2
2.0±0.2
PMDS
Structure
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacture date
Taping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
VRM
200
V
Reverse voltage (DC)
VR
200
V
Average rectified forward current (*1) Io
1
A
Forward current surge peak (60Hz・1cyc)
IFSM
20
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to 150
°C
(*1)Mounted on epoxy board. 180°Half sine wave
Electrical characteristics (Ta=25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Reverse recovery time
trr
Min. Typ. Max.
-
0.815 0.87
-
0.01 10
-
12
25
Unit
Conditions
V
IF=1.0A
μA
VR=200V
ns
IF=0.5A,IR=1A,Irr=0.25*IR
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2011.05 - Rev.B
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