RF101L4S Просмотр технического описания (PDF) - ROHM Semiconductor
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Компоненты Описание
производитель
RF101L4S Datasheet PDF : 4 Pages
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Diodes
RF101L4S
zElectrical characteristic curves
1
Ta=125℃
0.1
Ta=150℃
0.01
10000
Ta=75℃
Ta=25℃
Ta=-25℃
1000
100
10
Ta=150℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
1
0.001
0
200 400 600 800 1000 1200
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.1
0
50 100 150 200 250 300 350 400
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
10
1
0
f=1MHz
5
10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1300
1200
1100
1000
900
800
500
Ta=25℃
450
IF=1A
400
n=30pcs
350
300
250
200
150
AVE:1007mV
100
50
0
VF DISPERSION MAP
100
Ta=25℃
90
VR=400V
80
n=30pcs
70
60
50
40
AVE:24.8nA
30
20
10
0
IR DISPERSION MAP
AVE:41.8pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
Ct DISPERSION MAP
200
150
100
50
0
1000
100
10
1
30
Ifsm
1cyc
25
8.3ms
20
15
AVE:48.0A
10
5
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
AVE:18.4ns
1000
100
10
Ifsm
8.3ms 8.3ms
1cyc
IFSM DISRESION MAP
Ifsm
t
0
trr DISPERSION MAP
Mounted on epoxy board
1000 IM=10mA
IF=100mA
1m tim
100
300u
Rth(j-a)
Rth(j-c)
10
1
1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
3
DC
2.5
D=1/2
2
Sin(θ＝180)
1.5
1
0.5
0.1
0
10
100
0.001
0.1
10
1000
0
0.5
1
1.5
2
TIME:t(ms)
TIME:t(s)
IFSM-t CHARACTERISTICS
Rth-t CHARACTERISTICS
2/3
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