RF101L4S Просмотр технического описания (PDF) - ROHM Semiconductor
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производитель
RF101L4S Datasheet PDF : 4 Pages
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Diodes
Fast recovery diode
RF101L4S
zApplications
General rectification
zFeatures
1) Small power mold type
(PMDS)
2) Ultra low VF
3) Ultra high switching speed
4) Low switching loss
zConstructure
Silicon epitaxial planar
zDimensions (Unit : mm)
2.6±0.2
66
①②
1.5±0.2
0.1±0.02
0.1
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacture date
RF101L4S
zLand size figure (Unit : mm)
2.0
PMDS
zStructure
zTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak （60Hz・1cyc）
Junction temperature
Storage temperature
VRM
VR
Io
IFSM
Tj
Tstg
(*1)Mounting on epoxy board. 180°Half sine wave
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
Reverse recovery time
VF
-
- 1.25
IR
-
-
10
trr
-
-
25
φ1.55
Limits
400
400
1
20
150
-55 to +150
2.8MAX
Unit
V
V
A
A
℃
℃
Unit
Conditions
V
IF=1.0A
µA
VR=400V
ns
IF=0.5A,IR=1A,Irr=0.25*IR
1/3
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