RF071M2S Просмотр технического описания (PDF) - ROHM Semiconductor

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производитель

RF071M2S

Fast Recovery Diode

ROHM Semiconductor 

Data Sheet

Fast Recovery Diode

RF071M2S

Applications

General rectification

Dimensions (Unit : mm)

1.6±0.1

0.1±0.1

　　　 0.05

Land size figure (Unit : mm)

1.2

Features

1)Small power mold type.(PMDU)

2)Ultra low VF

3)Ultra high switching speed

4)Low switching loss

Construction

Silicon epitaxial planer

0.9±0.1

ROHM : PMDU

JEDEC :SOD-123

Manufacture Date

0.8±0.1

PMDU

Structure

Taping dimensions (Unit : mm)

4.0±0.1 2.0±0.05

φ1.55±0.05

0.25±0.05

Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Reverse voltage (repetitive)

Reverse voltage (DC)

Forward current（DC）

Average rectified forward current (*1)

Forward current surge peak (60Hz・1cyc)

Junction temperature

Storage temperature

VRM

VR

IF

Io

IFSM

Tj

Tstg

(*1)Mounted on epoxy board. 180°Half sine wave

1.81±0.1

4.0±0.1

φ1.0±0.1

Limits

Unit

200

V

200

V

1

A

0.7

A

15

A

150

°C

55 to 150

°C

1.5MAX

Electrical characteristics(Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Forward voltage

VF

-

0.79 0.85

Reverse current

IR

-

0.01 10

Reverse recovery time

trr

-

12

25

Unit

Conditions

V

IF=0.7A

μA

VR=200V

ns

IF=0.5A,IR=1A,Irr=0.25*IR

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1/3

2011.05 - Rev.E

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