R6020FNX Просмотр технического описания (PDF) - ROHM Semiconductor

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производитель

R6020FNX

Nch 600V 20A Power MOSFET

ROHM Semiconductor 

R6020FNX

Data Sheet

Absolute maximum ratings

Parameter

Symbol

Conditions

Values Unit

Drain - Source voltage slope

VDS = 480V, ID = 20A

dv/dt

50 V/ns

Tj = 125°C

Thermal resistance

Parameter

Symbol

Min.

for Values

Unit

Typ. Max.

Thermal resistance, junction - case

d Thermal resistance, junction - ambient

Soldering temperature, wavesoldering for 10s

RthJC

RthJA

Tsold

-

-

1.47

-

-

70

-

-

265

nde s Electrical characteristics(Ta = 25°C)

me ign Parameter

Symbol

Conditions

s Drain - Source breakdown

voltage

V(BR)DSS VGS = 0V, ID = 1mA

Values

Min. Typ. Max.

600

-

-

om e Drain - Source avalanche

D breakdown voltage

V(BR)DS VGS = 0V, ID = 20A

-

700

-

ec Zero gate voltage

R ew drain current

VDS = 600V, VGS = 0V

IDSS Tj = 25°C

-

Tj = 125°C

-

1

100

-

10

t Gate - Source leakage current

IGSS VGS = 30V, VDS = 0V

-

-

100

N Gate threshold voltage

VGS (th) VDS = 10V, ID = 1mA

3

-

5

No Static drain - source

on - state resistance

VGS = 10V, ID = 10A

RDS(on) *6 Tj = 25°C

-

0.19 0.25

°C/W

°C/W

°C

Unit

V

V

A

mA

nA

V



Tj = 125°C

-

0.44

-

Gate input resistance

RG f = 1MHz, open drain

-

13.5

-



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2016.02 - Rev.D

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