R5007ANX Просмотр технического описания (PDF) - ROHM Semiconductor
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производитель
R5007ANX Datasheet PDF : 6 Pages
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R5007ANX
100
VGS= 0V
Pulsed
10
1
Ta= 125°C
Ta= 75°C
0.1
Ta= 25°C
Ta= -25°C
0.01
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 Reverse Drain Current vs.
Sourse-Drain Voltage
10000
1000
Ciss
100
Crs
Coss
10 Ta= 25°C
f= 1MHz
VGS= 0V
1
0.1
1
10
100 1000
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
15
Ta= 25°C
VDD= 250V
ID= 7A
10 RG= 10Ω
Pulsed
5
Data Sheet
0
0
5
10 15 20 25
TOTAL GATE CHARGE : Qg (nC)
Fig.12 Dynamic Input Characteristics
1000
100
10
0.1
Ta= 25°C
di / dt= 100A / μs
VGS= 0V
Pulsed
1
10
100
REVERSE DRAIN CURRENT : IDR (A)
Fig.13 Reverse Recovery Time
vs.Reverse Drain Current
10000
1000
100
td(off)
Ta= 25°C
VDD= 250V
tf
VGS= 10V
RG= 10Ω
Pulsed
10
tr
1
0.01
0.1
td(on)
1
10
100
DRAIN CURRENT : ID (A)
Fig.14 Switching Characteristics
10
1
Ta = 25°C
Single Pulse : 1Unit
Rth（ch-a）（t） = ｒ（t）×Rth（ch-a）
0.1
Rth（ch-a） = 54.3°C/W
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE W IDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse W idth
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2010.01 - Rev.B
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