R5007ANX Просмотр технического описания (PDF) - ROHM Semiconductor

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R5007ANX

10V Drive Nch MOSFET

ROHM Semiconductor 

10V Drive Nch MOSFET

R5007ANX

Structure

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Fast switching speed.

3) Wide SOA (safe operating area).

4) Gate-source voltage (VGSS) guaranteed to be 30V.

5) Drive circuits can be simple.

6) Parallel use is easy.

Applications

Switching

Dimensions (Unit : mm)

TO-220FM

10.0

φ3.2

4.5

2.8

(1)Base

(2)Collector

(3)Emitter

1.2

1.3

0.8

2.54

2.54

0.75

2.6

(1) (2) (3)

Packaging specifications

Package

Bulk

Code

−

Type Basic ordering unit (pieces)

500

R5007ANX

Absolute maximum ratings (Ta=25C)

Parameter

Symbol

Limits

Unit

Drain-source voltage

VDSS

500

V

Gate-source voltage

VGSS

±30

V

Continuous

ID ∗3

±7

A

Drain current

Pulsed

IDP ∗1

±28

A

Source current

Continuous

IS ∗3

7

A

(Body Diode)

Pulsed

ISP ∗1

28

A

Avalanche Current

IAS ∗2

3.5

A

Avalanche Energy

EAS ∗2

3.2

mJ

Total power dissipation (Tc=25°C)

PD

40

W

Channel temperature

Tch

150

°C

Range of storage temperature

Tstg

−55 to +150

°C

∗1 Pw≤10μs, Duty cycle≤1%

∗2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C

∗3 Limited only by maximum tempterature allowed

Thermal resistance

Parameter

Channel to case

Symbol

Rth(ch-c)

Limits

3.13

Unit

°C/W

Inner circuit

∗1

(1)

(1) Gate

(2) Drain

(3) Source

(2)

(3)

∗1 Body Diode

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○c 2010 ROHM Co., Ltd. All rights reserved.

2010.01 - Rev.B

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