R5007ANJ Просмотр технического описания (PDF) - ROHM Semiconductor
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R5007ANJ Datasheet PDF : 6 Pages
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10V Drive Nch MOSFET
R5007ANJ
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (VGSS) guaranteed to be ±30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
zDimensions (Unit : mm)
LPTS
10.1
4.5 1.3
1.24
(1) Base (Gate)
(2) Collector (Drain)
(3) Emitter (Source)
2.54
0.78
0.4
5.08
2.7
(1) (2) (3)
Each lead has same dimensions
zApplications
Switching
zInner circuit
zPackaging specifications
Package
Code
Type Basic ordering unit (pieces)
R5007ANJ
Taping
TL
1000
(1)
(1) Gate
(2) Drain
(3) Source
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
500
V
Gate-source voltage
VGSS
±30
V
Continuous
ID ∗3
±7
A
Drain current
Pulsed
IDP ∗1
±28
A
Source current
Continuous
IS ∗3
7
A
(Body Diode)
Pulsed
ISP ∗1
28
A
Avalanche Current
IAS ∗2
3.5
A
Avalanche Energy
EAS ∗2
3.5
mJ
Total power dissipation (Tc=25°C)
PD
40
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum tempterature allowed
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
3.13
Unit
°C/W
∗1
(2)
(3)
∗1 Body Diode
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1/5
2009.02 - Rev.A
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