R2A20118ASP Просмотр технического описания (PDF) - Renesas Electronics
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R2A20118ASP Datasheet PDF : 10 Pages
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R2A20118ASP
Preliminary
Electrical Characteristics (cont.)
(Ta = 25°C, VCC = 12 V, RT = 33 k, BO = 5 V, OCP = TL = OVP2 = GND, CRAMP = 820 pF, FB = COMP,
RAMP-GAIN = OPEN)
Slave
control
Item
Phase delay
On time ratio
Symbol
Phase
Ton-ratio
Min
Typ Max
Unit
Test Conditions
160
180
200
deg
*1, *2
0
—
5
%
*1, *2
Gate drive Master gate drive rise time
tr-gdm
—
20
100
ns
CL = 100 pF 90%
10%
tr
Slave gate drive rise time
tr-gds
—
20
100
ns
CL = 100 pF 90%
10%
tr
Master gate drive fall time
tf-gdm
—
5
30
ns
CL = 100 pF 90%
10%
tf
Slave gate drive fall time
tf-gds
—
5
30
ns
CL = 100 pF 90%
10%
tf
Master gate drive low voltage
Vol1-gdm
—
0.02 0.1
V
Isink = 2 mA
Master gate drive high voltage
Vol2-gdm
Voh-gdm
—
0.01 0.2
11.5 11.9
—
V
Isink = 1 mA, VCC = 5 V
V
Isource = –2 mA *1
Slave gate drive low voltage
Vol1-gds
—
0.02
0.1
V
Isink = 2 mA
Slave gate drive high voltage
Vol2-gds
Voh-gds
—
0.01
0.2
11.5 11.9
—
V
Isink = 1 mA, VCC = 5 V
V
Isource = –2 mA *1
Over
current
protection
OCP threshold voltage
Vocp
0.27 0.30 0.33
V
Over
voltage
protection
Dynamic OVP threshold voltage Vdovp
Static OVP threshold voltage
Vsovp1
VFB
1.035
VFB
1.075
VFB
1.050
VFB
1.090
VFB
1.065
VFB
1.105
V
COMP = 2.5 V
V
COMP = 2.5 V
Static OVP hysteresis
Hys-sovp1
50
100
150
mV COMP = 2.5 V
FB Low detect threshold
voltage
Vfblow
0.45 0.50 0.55
V
COMP = 2.5 V
FB Low detect hysteresis
Hysfblow
0.16 0.20 0.24
V
COMP = 2.5 V
OVP2 threshold voltage
Vovp2
2.670 2.725 2.780
V
Measured pin: OVP2
OVP2 pin input bias current
Iovp2
–0.5 –0.3 –0.1
A Measured pin: OVP2
OVP2 = 3 V *1
Notes: *1 Design spec.
*2
Tperiod (25 μs)
Ton-m (17 μs)
GD-M
GD-S
Tdelay
Phase =
Tdelay
Tperiod
× 360 [deg]
Ton-ratio =
1
–
Ton-s
Ton-m
× 100 [%]
Ton-s
R03DS0002EJ0100 Rev.1.00
Jul 14, 2010
Page 6 of 9
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