DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

R2A20113DD Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталоге
Компоненты Описание
производитель
R2A20113DD
Renesas
Renesas Electronics Renesas
R2A20113DD Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
R2A20113DD/SP
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Note
Supply voltage
Vcc
–0.3 to 24
V
OUT peak current
Ipk-out
±0.9
A
3
OUT DC current
Idc-out
±100
mA
COMP terminal current
Icomp
±1
mA
RT terminal current
Irt
–50
µA
Vref terminal current
Iref
–5
mA
Vref terminal voltage
Vt-ref
–0.3 to Vref + 0.3
V
FB terminal voltage
Vt-fb
–0.3 to +5
V
CS terminal voltage
Vcs
–1.5 to +0.3
V
Power dissipation
Pt
0.68
W
4
Operating junction temperature
Tj-opr
–40 to +150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Rated voltages are with reference to the GND terminal.
2. For rated currents, inflow to the IC is indicated by (+), and outflow by (–).
3. Shows the transient current when driving a capacitive load.
4. In case of R2A20113DD (DILP): θja = 120°C/W
In case of R2A20113SP (SOP): θja = 120°C/W
This value is a thing mounting on 40 × 40 × 1.6 [mm], a glass epoxy board of wiring density 10%.
REJ03F0279-0100 Rev.1.00 Oct 10, 2008
Page 4 of 6

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]