SXL-189-TR2 Просмотр технического описания (PDF) - Stanford Microdevices

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производитель

SXL-189-TR2

800-1000 MHz 50 Ohm Power MMIC Amplifier

Stanford Microdevices 

Absolute Maximum Ratings

Param eter

Ab solu te

M ax imum

Device Voltage

7V

Device Current

2 00 mA

Power Dissipation

1 50 0m W

RF Input Power

1 00 mW

Junction Temperature

+ 15 0C

Operating Temperature -45C to +85C

Storage Temperature -65C to +150C

Notes:

1. Operation of this device above any one

of these parameters may cause permanent

damage.

MTTF vs. Temperature

@ Id = 110mA

Lead

Temperature

Junction

MTTF (hrs)

Temperature

+25C

+90C

>10,000,000

+60C

+125C

>5,000,000

+85C

+150C

1,000,000

Thermal Resistance (Lead-Junction): 60° C/W

Preliminary

SXL-189 800-1000 MHz Power MMIC Amplifier

Part Number Ordering Information

Part Nu mb er

Devices Per Reel

Reel Size

SXL-189-TR1

500

7"

SXL-189-TR2

1000

13"

SXL-189-EB

Eval Board

-

Application Schematic and Bias Circuit

for 900 MHz Operation

1uF 1000pF 33pF

+5VDC

100pF

1.2K Ohm

33 nH

100pF

3.0pF

SSXXAL--128899

680 Ohm

Board Layout and Matching Circuit

at 900 MHz

GND

INPUT

R=680 Ohm

C= 10 0pF

C= 3.0 pF

GND

R=1.2k Ohm

L= 33 nH

OUTPUT

C= 10 0pF

+5

33 pF

1u F

GND

10 00p F

522 Almanor Ave., Sunnyvale, CA 94086

Phone: (800) SMI-MMIC

4

http://www.stanfordmicro.com

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