PZT65 Просмотр технического описания (PDF) - ON Semiconductor

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производитель

PZT65

NPN Silicon Planar Epitaxial Transistor

ON Semiconductor 

PZT651T1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics

Symbol

Min

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CEO

60

Collector–Emitter Breakdown Voltage

(IC = 100 µAdc, IE = 0)

V(BR)CBO

80

Emitter–Base Breakdown Voltage

(IE = 10 µAdc, IC = 0)

V(BR)EBO

5.0

Base–Emitter Cutoff Current

(VEB = 4.0 Vdc)

IEBO

—

Collector–Base Cutoff Current

(VCB = 80 Vdc, IE = 0)

ICBO

—

ON CHARACTERISTICS (2)

DC Current Gain

(IC = 50 mAdc, VCE = 2.0 Vdc)

(IC = 500 mAdc, VCE = 2.0 Vdc)

(IC = 1.0 Adc, VCE = 2.0 Vdc)

(IC = 2.0 Adc, VCE = 2.0 Vdc)

hFE

75

75

75

40

Collector–Emitter Saturation Voltages

(IC = 2.0 Adc, IB = 200 mAdc)

(IC = 1.0 Adc, IB = 100 mAdc)

VCE(sat)

—

—

Base–Emitter Voltages

(IC = 1.0 Adc, VCE = 2.0 Vdc)

VBE(on)

—

Base–Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 100 mAdc)

VBE(sat)

—

Current–Gain — Bandwidth

(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

fT

75

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%

Max

Unit

—

Vdc

—

Vdc

—

Vdc

0.1

µAdc

100

nAdc

—

—

—

—

—

Vdc

0.5

0.3

1.0

Vdc

1.2

Vdc

—

MHz

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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