PSMN004-36B Просмотр технического описания (PDF) - Philips Electronics

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PSMN004-36B

N-channel enhancement mode field-effect transistor

Philips Electronics 

Philips Semiconductors

PSMN004-36P/36B

N-channel enhancement mode field-effect transistor

2.5

VGS(th)

(V)

2

1.5

1

max

typ

min

03aa33

10-1

ID

(A)

10-2

10-3

10-4

03aa36

min typ max

0.5

10-5

0

-60

0

60

120

180

Tj (oC)

ID = 1 mA; VDS = VGS

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

10-6

0

0.5

1

1.5

2

2.5

3

VGS (V)

Tj = 25 °C; VDS = 5 V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

105

C

(pF)

03ag49

104

Ciss

103

10-1

1

Coss

Crss

10

102

VDS (V)

VGS = 0 V; f = 1 MHz

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

9397 750 08621

Product data

Rev. 01 — 19 November 2001

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

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