Philips Semiconductors
PNP high-voltage transistors
Product specification
2N5415; 2N5416
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
2N5415
2N5416
collector-emitter voltage
2N5415
2N5416
emitter-base voltage
2N5415
2N5416
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 50 °C
Tcase ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
in free air
MIN. MAX. UNIT
−
−200 V
−
−350 V
−
−200 V
−
−300 V
−
−4
V
−
−6
V
−
−200 mA
−
−400 mA
−
−200 mA
−
1
W
−
10
W
−65
+200 °C
−
200
°C
−65
+150 °C
VALUE
150
17.5
UNIT
K/W
K/W
1997 May 21
3