HCF4014B Просмотр технического описания (PDF) - STMicroelectronics
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HCF4014B Datasheet PDF : 13 Pages
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HCC/HCF4014B/4021B
STATIC ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter
Test Conditions
Value
VI
VO |IO | VD D
T Lo w*
25°C
T High*
(V) (V) (µA) (V) Min. Max. Min. Typ. Max. Min. Max.
I OH Output
0/ 5 2.5
Drive
Current
HCC 0/ 5 4.6
Types 0/10 9.5
5 –2
5 – 0.64
10 – 1.6
– 1.6 – 3.2
– 0.51 – 1
– 1.3 – 2.6
– 1.15
– 0.36
– 0.9
0/15 13.5
15 – 4.2
– 3.4 – 6.8
– 2.4
0/ 5 2.5
5 – 1.53
– 1.36 – 3.2
– 1.1
HCF 0/ 5 4.6
Types 0/10 9.5
5 – 0.52
10 – 1.3
– 0.44 – 1
– 1.1 – 2.6
– 0.36
– 0.9
0/15 13.5
15 – 3.6
– 3.0 – 6.8
– 2.4
I OL Output
0/ 5 0.4
Sink
Current
HCC
Types
0/10
0.5
0/15 1.5
5 0.64
0.51 1
0.36
10 1.6
1.3 2.6
0.9
15 4.2
3.4 6.8
2.4
I IH, IIL
Input
Leakage
Current
0/ 5
HCF
Types
0/10
0/15
HCC 0/18
Types
HCF 0/15
Types
0.4
0.5
1.5
Any Input
5 0.52
0.44 1
0.36
10 1.3
1.1 2.6
0.9
15 3.6
3.0 6.8
2.4
18
± 0.1
±10– 5 ± 0.1
±1
15
± 0.3
±10– 5 ± 0.3
±1
CI Input Capacitance
Any Input
5 7.5
* TLow = – 55°C for HCC device : – 40°C for HCF device.
* THigh = + 125°C for HCC device : + 85°C for HCF device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5 V min. with VDD = 15V.
Unit
mA
mA
µA
pF
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb = 25°C, CL = 50pF, RL = 200kΩ,
typical temperature coefficient for all VDD = 0.3%/°C values, all input rise and fall time = 20ns)
Symbol
Parameter
CLOCKED OPERATION
Test Conditions
V al ue
V D D (V) Min. Typ. Max.
Unit
tP L H, tP HL Propagation Delay Time
5
160 320
10
80 160
ns
15
60 120
t THL , tT L H Transition Time
5
100 200
10
50 100 ns
15
40 80
fCL * Maximum Clock Input Frequency
5
3
6
10
6
12
MHz
15
8.5 17
tW
Clock Pulse Width
5
180 90
10
80 40
ns
15
50 25
* If more than one unit is cascaded trCL should be made less than or equal to the sum of the transition time and the fixed propagation delay of
the output of the driving stage of the estimated capacitive load.
5/13
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