VE28F008-95 Просмотр технического описания (PDF) - Intel

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VE28F008-95

8 MBIT (1 MBIT x 8) FLASH MEMORY

Intel 

VE28F008

271305 – 3

Figure 3 VE28F008 Array Interface to Intel386TM SL Microprocessor Superset through PI Bus

(Including RY BY Masking and Selective Powerdown) for DRAM Backup during System SUSPEND

Resident O S and Applications and Motherboard Solid-State Disk

PRINCIPLES OF OPERATION

The VE28F008 includes on-chip write automation to

manage write and erase functions The Write State

Machine allows for 100% TTL-level control inputs

fixed power supplies during block erasure and byte

write and minimal processor overhead with RAM-

like interface timings

After initial device powerup or after return from

deep powerdown mode (see Bus Operations) the

VE28F008 functions as a read-only memory Manip-

ulation of external memory-control pins allow array

read standby and output disable operations Both

Status Register and intelligent identifier can

also be accessed through the Command User Inter-

face when VPP e VPPL

This same subset of operations is also available

when high voltage is applied to the VPP pin In addi-

tion high voltage on VPP enables successful block

erasure and byte writing of the device All functions

associated with altering memory contents byte

write block erase status and intelligent identifier

are accessed via the Command User Interface and

verified thru the Status Register

Commands are written using standard microproces-

sor write timings Command User Interface contents

serve as input to the WSM which controls the block

5

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