M28F008 Просмотр технического описания (PDF) - Intel

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M28F008

8-Mbit (1Mbit x 8) flash memory

Intel 

M28F008

PRODUCT OVERVIEW

The M28F008 is a high-performance 8 Mbit

(8 388 608 bit) memory organized as 1 Mbyte

(1 048 576 bytes) of 8 bits each Sixteen 64 Kbyte

(65 536 byte) blocks are included on the M28F008

A memory map is shown in Figure 4 of this specifica-

tion A block erase operation erases one of the six-

teen blocks of memory in typically 1 6 seconds in-

dependent of the remaining blocks Each block can

be independently erased and written 10 000 cycles

Erase Suspend mode allows system software to

suspend block erase to read data or execute code

from any other block of the M28F008

The M28F008 is available in 40-lead sidebrazed

DIP and 42-lead Flatpack packages Pinouts are

shown in Figures 2a and 2b of this specification

The Command User Interface serves as the inter-

face between the microprocessor or microcontroller

and the internal operation of the M28F008

Byte Write and Block Erase Automation allow

byte write and block erase operations to be execut-

ed using a two-write command sequence to the

Command User Interface The internal Write State

Machine (WSM) automatically executes the algo-

rithms and timings necessary for byte write and

block erase operations including verifications

thereby unburdening the microprocessor or micro-

controller Writing of memory data is performed in

byte increments typically within 9 ms an 80% im-

provement over current flash memory products IPP

byte write and block erase currents are 30 mA

maximum VPP byte write and block erase volt-

age is 11 4V to 12 6V

The Status Register indicates the status of the

WSM and when the WSM successfully completes

the desired byte write or block erase operation

The RY BY output gives an additional indicator of

WSM activity providing capability for both hardware

signal of status (versus software polling) and status

masking (interrupt masking for background erase

for example) Status polling using RY BY minimizes

both CPU overhead and system power consump-

tion When low RY BY indicates that the WSM is

performing a block erase or byte write operation

RY BY high indicates that the WSM is ready for new

commands block erase is suspended or the device

is in deep powerdown mode

Maximum access time is 100 ns (tACC) over the mili-

tary temperature range (b55 C to a125 C) and

over VCC supply voltage range 4 5V to 5 5V ICC ac-

tive current (CMOS Read) is 35 mA maximum at

8 MHz

When the CE and RP pins are at VCC the ICC CMOS

Standby mode is enabled

A Deep Powerdown mode is enabled when the RP

pin is at GND minimizing power consumption and

providing write protection ICC current in deep pow-

erdown is 100 mA maximum Reset time of 400 ns

is required from RP switching high until outputs are

valid to read attempts Equivalently the device has a

wake time of 1 ms from RP high until writes to the

Command User Interface are recognized by the

M28F008 With RP at GND the WSM is reset and

the Status Register is cleared

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