M28F008 Просмотр технического описания (PDF) - Intel

Номер в каталоге

Компоненты Описание

производитель

M28F008

8-Mbit (1Mbit x 8) flash memory

Intel 

M28F008

8 MBIT (1 MBIT x 8) FLASH MEMORY

Y High-Density Symmetrically Blocked

Architecture

Sixteen 64 Kbyte Blocks

Y Extended Cycling Capability

10K Block Erase Cycles Minimum

160K Block Erase Cycles per Chip

Y Automated Byte Write and Block Erase

Command User Interface

Status Register

Y System Performance Enhancements

RY BY Status Output

Erase Suspend Capability

Y SRAM-Compatible Write Interface

Y Very High-Performance Read

100 ns Maximum Access Time

Y Hardware Data Protection Feature

Erase Write Lockout during Power

Transitions

Y Industry Standard Packaging

40-Lead Sidebrazed DIP

42-Lead Flatpack

Y ETOXTM Nonvolatile Flash Technology

12V Byte Write Block Erase

Y Independent Software Vendor Support

Microsoft Flash File System (FFS)

Intel’s M28F008 8-Mbit FlashFile Memory is the highest density nonvolatile read write solution for solid state

storage The M28F008’s extended cycling symmetrically blocked architecture fast access time write automa-

tion and low power consumption provide a more reliable lower power lighter weight and higher performance

alternative to traditional rotating disk technology The M28F008 brings new capabilities to portable computing

Application and operating system software stored in resident flash memory arrays provide instant-on rapid

execute-in-place and protection from obsolescence through in-system software updates Resident software

also extends system battery life and increases reliability by reducing disk drive accesses

For high-density data acquisition applications the M28F008 offers a more cost-effective and reliable alterna-

tive to SRAM and battery Traditional high density embedded applications such as telecommunications can

take advantage of the M28F008’s nonvolatility blocking and minimal system code requirements for flexible

firmware and modular software designs

The M28F008 is offered in 40-lead sidebrazed DIP and 42-lead Flatpack packages This device uses an

integrated Command User Interface and state machine for simplified block erasure and byte write The

M28F008 memory map consists of 16 separately erasable 64 Kbyte blocks

Intel’s M28F008 employs advanced CMOS circuitry for systems requiring low power consumption and noise

immunity Its 100 ns access time provides superior performance when compared with magnetic storage media

A deep powerdown mode lowers power consumption to 500 mW maximum thru VCC The RP power control

input also provides absolute data protection during system powerup down

Manufactured on Intel’s ETOX process technology the M28F008 provides the highest levels of quality reliabil-

ity and cost-effectiveness

Microsoft is a trademark of Microsoft Corporation

Intel Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in an Intel product No other circuit patent

licenses are implied Information contained herein supersedes previously published specifications on these devices from Intel

November 1994

Order Number 271232-004

INTEL CORPORATION 1994

1

Share Link: