PNZ313B Просмотр технического описания (PDF) - Panasonic Corporation
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PNZ313B Datasheet PDF : 2 Pages
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PIN Photodiodes
PNZ313B
PIN Photodiode
For optical control systems
Features
Fast response which is well suited to high speed modulated light
detection : tr, tf = 50 ns (typ.)
High sensitivity, high reliability
Peak sensitivity wavelength matched with infrared light emitting
diodes : λP = 960 nm (typ.)
Wide detection area, wide acceptance half angle : θ = 65 deg. (typ.)
Adoption of visible light cutoff resin
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
VR
30
V
PD
100
mW
Topr
–30 to +85
˚C
Tstg – 40 to +100 ˚C
7.0±0.5
Unit : mm
Anode mark ø1.6
Device
center
2-1.2±0.15
2-0.6±0.15
0.41±0.15
2
1
5.08±0.25
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
ID
VR = 10V
5
50 nA
Photo current
IL
VR = 10V, L = 1000 lx*1
15 25
µA
Peak sensitivity wavelength
λP
VR = 10V
960
nm
Response time
tr, tf*2 VR = 10V, RL = 1kΩ
50
ns
Response time
tr, tf*2 VR = 10V, RL = 100kΩ
5
µs
Capacitance between pins
Ct
VR = 0V, f = 1MHz
70
pF
Acceptance half angle
θ
Measured from the optical axis to the half power point
65
deg.
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
Sig.IN
VR = 10V
(Input pulse)
λP = 800nm
50,Ω ,,,
Sig.OUT
(Output pulse)
,,,,RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
1
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