PN4416 Просмотр технического описания (PDF) - Philips Electronics
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PN4416 Datasheet PDF : 9 Pages
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Philips Semiconductors
N-channel field-effect transistor
Product specification
PN4416; PN4416A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VDS
VGSO
VGDO
IG
Ptot
Tstg
Tj
drain-source voltage
PN4416
PN4416A
gate-source voltage
PN4416
PN4416A
gate-drain voltage
PN4416
PN4416A
DC forward gate current
total power dissipation
storage temperature
junction temperature
up to Tamb = 25 °C (note 1)
MIN.
MAX.
UNIT
−
30
V
−
35
V
−
−30
V
−
−35
V
−
−30
V
−
−35
V
−
10
mA
−
400
mW
−65
+150
°C
−
150
°C
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL RESISTANCE
Rth j-a
from junction to ambient (note 1)
350 K/W
Note
1. Mounted on a printed-circuit board, maximum lead length 4 mm, mounting pad for drain leads 10 mm2.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)GSS
IGSS
IDSS
VGSS
VGS(off)
Yfs
Yos
gate-source breakdown voltage
PN4416
PN4416A
reverse gate leakage current
drain current
gate-source forward voltage
gate-source cut-off voltage
PN4416
PN4416A
common source transfer admittance
common source output admittance
PN4416
PN4416A
CONDITIONS
VDS = 0; IG = −1 µA
VDS = 0; VGS = −15 V
VDS = 15 V; VGS = 0
VDS = 0; IG = 1 mA
VDS = 15 V; ID = 1 nA
VDS = 15 V; VGS = 0
VDS = 15 V; VGS = 0
MIN. MAX. UNIT
−30
−
V
−35
−
V
−
−1
nA
5
15
mA
−
1
V
−
−6
V
−2.5 −6
V
4.5
7.5
mS
−
50
µS
−
50
µS
December 1997
3
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