PN4416 Просмотр технического описания (PDF) - Philips Electronics
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PN4416 Datasheet PDF : 9 Pages
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Philips Semiconductors
N-channel field-effect transistor
Product specification
PN4416; PN4416A
FEATURES
• Low noise
• Interchangeability of drain and
source connections
• High gain.
DESCRIPTION
N-channel symmetrical silicon
junction FETs in a SOT54 envelope.
These devices are intended for use in
VHF/UHF amplifiers, oscillators and
mixers.
PINNING - SOT54 (TO-92).
PIN
DESCRIPTION
1 gate
2 source
3 drain
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS MIN. MAX. UNIT
VDS
drain-source voltage
PN4416
PN4416A
−
30 V
−
35 V
IDSS
drain current
Ptot
total power
dissipation
VDS = 15 V; VGS = 0 5
up to Tamb = 25 °C −
15 mA
400 mW
VGS(off)
gate-source cut-off VDS = 15 V;
voltage
ID = 1 nA
PN4416
−
−6 V
PN4416A
−2.5 −6 V
Yfs
common-source
VDS = 15 V;
4.5 7.5 mS
transfer admittance VGS = 0; f = 1 kHz
handbook, half1pa2ge
3
d
g
s
MAM042
Fig.1 Simplified outline and symbol.
December 1997
2
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