PN168 Просмотр технического описания (PDF) - Panasonic Corporation
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производитель
PN168 Datasheet PDF : 3 Pages
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Phototransistors
PNA1801L
PC — Ta
120
100
80
60
40
20
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
20
Ta = 25˚C
T = 2856K
16
L = 2000 lx
1750 lx
12
1500 lx
1250 lx
1000 lx
8
750 lx
4
500 lx
250 lx
0
0 4 8 12 16
Collector to emitter voltage
100 lx
20 24
VCE (V)
10 3
10 2
10
1
10 –1
10 –2
1
ICE(L) — L
VCE = 10V
Ta = 25˚C
T = 2856K
10
10 2
10 3
10 4
Illuminance L (lx)
ICEO — Ta
10 3
VCE = 10V
10 2
10
1
ICE(L) — Ta
10 2
VCE = 10V
T = 2856K
Spectral sensitivity characteristics
100 VCE = 10V
Ta = 25˚C
80
10
L = 1000 lx
60
500 lx
40
1
20
10 –1
– 40
0
40
80
120
Ambient temperature Ta (˚C )
10 –1
– 40
0
40
80
120
Ambient temperature Ta (˚C )
0
200 400 600 800 1000 1200
Wavelength λ (nm)
Directivity characteristics
0˚
10˚ 20˚
100
90
80
30˚
70
60
40˚
50
40
50˚
30
60˚
20
70˚
80˚
90˚
tr — ICE(L)
10 4
Ta = 25˚C
10 3
10 2
RL = 1kΩ
10
500Ω
100Ω
1
10 –1
10 –2
10 –1
1
10
10 2
Collector photo current ICE(L) (mA)
tf — ICE(L)
10 4
Ta = 25˚C
10 3
10 2
RL = 1kΩ
10
500Ω
100Ω
1
10 –1
10 –2
10 –1
1
10
10 2
Collector photo current ICE(L) (mA)
2
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