PMST2222 Просмотр технического описания (PDF) - NXP Semiconductors.
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PMST2222 Datasheet PDF : 7 Pages
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NXP Semiconductors
NPN switching transistors
Product data sheet
PMST2222; PMST2222A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
PMST2222
collector cut-off current
PMST2222A
IEBO
collector cut-off current
hFE
DC current gain
VCEsat
VBEsat
Cc
Ce
fT
DC current gain
PMST2222
PMST2222A
collector-emitter saturation voltage
PMST2222
collector-emitter saturation voltage
PMST2222A
base-emitter saturation voltage
PMST2222
base-emitter saturation voltage
PMST2222A
collector capacitance
emitter capacitance
PMST2222
PMST2222A
transition frequency
PMST2222
PMST2222A
CONDITIONS
MIN.
IE = 0; VCB = 50 V
−
IE = 0; VCB = 50 V; Tj = 125 °C
−
IE = 0; VCB = 60 V
−
IE = 0; VCB = 60 V; Tj = 125 °C
−
IC = 0; VEB = 3 V
−
IC = 0.1 mA; VCE = 10 V
35
IC = 1 mA; VCE = 10 V
50
IC = 10 mA; VCE = 10 V
75
IC = 10 mA; VCE = 10 V; Tamb = −55 °C 35
IC = 150 mA; VCE = 1 V; note 1
50
IC = 150 mA; VCE = 10 V; note 1
100
IC = 500 mA; VCE = 10 V; note 1
30
40
IC = 150 mA; IB = 15 mA; note 1
−
IC = 500 mA; IB = 50 mA; note 1
−
IC = 150 mA; IB = 15 mA; note 1
−
IC = 500 mA; IB = 50 mA; note 1
−
IC = 150 mA; IB = 15 mA; note 1
−
IC = 500 mA; IB = 50 mA; note 1
−
IC = 150 mA; IB = 15 mA; note 1
0.6
IC = 500 mA; IB = 50 mA; note 1
−
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
−
IC = 20 mA; VCE = 20 V; f = 100 MHz
250
300
MAX.
10
10
10
10
10
−
−
−
−
−
300
UNIT
nA
µA
nA
µA
nA
−
−
400 mV
1.6
V
300 mV
1
V
1.3
V
2.6
V
1.2
V
2
V
8
pF
30
pF
25
pF
−
MHz
−
MHz
1999 Apr 22
3
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