PMSTA92 Просмотр технического описания (PDF) - Philips Electronics
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PMSTA92 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP high-voltage transistors
Product specification
PMSTA92; PMSTA93
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
fT
collector cut-off current
PMSTA92
PMSTA93
IE = 0; VCB = −200 V
−
IE = 0; VCB = −160 V
−
emitter cut-off current
IC = 0; VEB = −3 V
−
DC current gain
VCE = −10 V
IC = −1 mA
25
IC = −10 mA
40
IC = −30 mA
25
collector-emitter saturation voltage IC = −20 mA; IB = −2 mA
−
base-emitter saturation voltage
IC = −20 mA; IB = −2 mA
−
collector capacitance
IE = ie = 0; VCB = −20 V; f = 1 MHz
PMSTA92
−
PMSTA93
−
transition frequency
IC = −10 mA; VCE = −20 V; f = 100 MHz 50
MAX. UNIT
−250 nA
−250 nA
−100 nA
−
−
−
−500 mV
−900 mV
6
pF
8
pF
−
MHz
1999 Jun 01
3
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