PMPB40SNA Просмотр технического описания (PDF) - NXP Semiconductors.
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PMPB40SNA Datasheet PDF : 15 Pages
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NXP Semiconductors
PMPB40SNA
60 V N-channel Trench MOSFET
20
IS
(A)
16
aaa-005321
12
Tj = 150 °C
Tj = 25 °C
8
4
VGS = 0 V
0
0.0
0.4
0.8
1.2
VDS (V)
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
Fig. 17. Duty cycle definition
t
006aaa812
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PMPB40SNA
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© NXP N.V. 2013. All rights reserved
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