PMPB40SNA Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
производитель
PMPB40SNA Datasheet PDF : 15 Pages
| |||
NXP Semiconductors
PMPB40SNA
60 V N-channel Trench MOSFET
4
VGS(th)
(V)
3
aaa-005318
max
103
C
(pF)
Ciss
aaa-005319
2
typ
1
min
Coss
102
Crss
0
-60
0
60
ID = 0.25 mA; VDS = VGS
120
180
Tj (°C)
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
10
VGS
(V)
8
aaa-005320
10
10-1
1
f = 1 MHz; VGS = 0 V
10
102
VDS (V)
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
VDS
ID
6
4
2
0
0
5
10
15
QG (nC)
ID = 5 A; VDS = 30 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
017aaa137
Fig. 15. Gate charge waveform definitions
PMPB40SNA
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© NXP N.V. 2013. All rights reserved
8 / 15
Share Link: 