PMPB40SNA Просмотр технического описания (PDF) - NXP Semiconductors.
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PMPB40SNA Datasheet PDF : 15 Pages
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NXP Semiconductors
PMPB40SNA
60 V N-channel Trench MOSFET
Symbol
IGSS
RDSon
Parameter
gate leakage current
drain-source on-state
resistance
gfs
forward
transconductance
RG
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
Conditions
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 4.8 A; Tj = 25 °C
VGS = 10 V; ID = 4.8 A; Tj = 150 °C
VGS = 4.5 V; ID = 3.2 A; Tj = 25 °C
VDS = 5 V; ID = 4.8 A; Tj = 25 °C
f = 1 MHz
VDS = 30 V; ID = 4.8 A; VGS = 10 V;
Tj = 25 °C
VDS = 30 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = 30 V; ID = 4.8 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
IS = 1.7 A; VGS = 0 V; Tj = 25 °C
25
ID
(A)
20
10 V
4.5 V
3.6 V
15
aaa-005312
3.4 V
3.2 V
3V
10-3
ID
(A)
10-4
10
2.8 V
10-5
5
VGS = 2.6 V
Min Typ Max Unit
-
-
100 nA
-
-
-100 nA
-
34
43
mΩ
-
60
75
mΩ
-
40
50
mΩ
-
19
-
S
-
1.1 -
Ω
-
12.1 24
nC
-
1.4 -
nC
-
2.1 -
nC
-
612 -
pF
-
78
-
pF
-
52
-
pF
-
9
-
ns
-
23
-
ns
-
12
-
ns
-
12
-
ns
-
0.9 1.2 V
aaa-005313
min
typ
max
0
0
1
2
3
4
5
VDS (V)
Tj = 25 °C
10-6
0
1
Tj = 25 °C; VDS = 5 V
2
3
VGS (V)
Fig. 6.
PMPB40SNA
Output characteristics: drain current as a
Fig. 7. Subthreshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
29 October 2013
6 / 15
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