PMPB40SNA Просмотр технического описания (PDF) - NXP Semiconductors.
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PMPB40SNA Datasheet PDF : 15 Pages
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NXP Semiconductors
PMPB40SNA
60 V N-channel Trench MOSFET
Symbol
EDS(AL)S
Ptot
Parameter
non-repetitive drain-source
avalanche energy
total power dissipation
Tj
junction temperature
Tamb
ambient temperature
Tstg
storage temperature
Source-drain diode
IS
source current
Conditions
Tj(init) = 25 °C; ID = 0.6 A; DUT in
avalanche (unclamped)
Tamb = 25 °C
Tamb = 25 °C; t ≤ 5 s
Tsp = 25 °C
Tamb = 25 °C
Min Max Unit
-
19
mJ
[1]
-
1.7 W
[1]
-
3.5 W
-
12.5 W
-55 150 °C
-55 150 °C
-65 150 °C
[1]
-
1.7 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
120
017aaa123
120
017aaa124
Pder
Ider
(%)
(%)
80
80
40
40
0
- 75
- 25
25
75
125
175
Tj (°C)
Fig. 1. Normalized total power dissipation as a
function of junction temperature
0
- 75
- 25
25
75
125
175
Tj (°C)
Fig. 2. Normalized continuous drain current as a
function of junction temperature
PMPB40SNA
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© NXP N.V. 2013. All rights reserved
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