PMPB40SNA Просмотр технического описания (PDF) - NXP Semiconductors.

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PMPB40SNA

60 V N-channel Trench MOSFET

NXP Semiconductors. 

PMPB40SNA

60 V N-channel Trench MOSFET

29 October 2013

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power

DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

2. Features and benefits

• Trench MOSFET technology

• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

• Exposed drain pad for excellent thermal conduction

• Tin-plated 100 % solderable side pads for optical solder inspection

• AEC-Q101 qualified

3. Applications

• Relay driver

• High-speed line driver

• Low-side load switch

• Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

VDS

drain-source voltage

VGS

gate-source voltage

ID

drain current

Static characteristics

RDSon

drain-source on-state

resistance

Conditions

Tj = 25 °C

VGS = 10 V; Tsp = 25 °C

VGS = 10 V; ID = 4.8 A; Tj = 25 °C

Min Typ Max Unit

-

-

60

V

-20 -

20

V

-

-

12.9 A

-

34

43

mΩ

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